REACTIVE ION-BEAM ETCHING OF SIO2 AND POLYCRYSTALLINE SILICON

被引：29

作者：

BROWN, DM ^{[1
]}

HEATH, BA ^{[1
]}

COUTUMAS, T ^{[1
]}

THOMPSON, GR ^{[1
]}

机构：

[1] COMMONWEALTH SCI CORP,ALEXANDRIA,VA 22314

来源：

关键词：

D O I：

10.1063/1.91807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：159 / 161

页数：3

共 7 条

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[3] SI AND SIO2 ETCHING CHARACTERISTICS BY FLUOROCARBON ION-BEAM [J].

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SHIBAGAKI, M ;

KADONO, K .

[4]

MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P497

MEUSEMANN, B .

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[6]

ROBERTSON DD, 1978, SOLID STATE TECHNOL, V21, P57

[7]

THOMPSON GR, 1978, SOLID STATE TECHNOL, V21, P73