A PERCOLATION THEORY APPROACH TO THE IMPLANTATION INDUCED DIAMOND TO AMORPHOUS-CARBON TRANSITION

被引：73

作者：

KALISH, R ^{[1
]}

BERNSTEIN, T ^{[1
]}

SHAPIRO, B ^{[1
]}

TALMI, A ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期

关键词：

D O I：

10.1080/00337578008210028

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：153 / 168

页数：16

共 26 条

[1]

ANSCHEL M, UNPUBLISHED

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RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :139-144

[3]

BRAUNSTEIN G, 1978, 1ST P C ION BEAM MOD

[4]

BROSIOUS PR, 1974, PHYS STAT SOL, V21, P667

[5]

CARTER C, 1979, RAD EFF LETT, V43, P19

[6]

CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164

[7]

COHEN MH, 1978, 1977 AIP C P, P63

[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[9] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[10] HARD CONDUCTING IMPLANTED DIAMOND LAYERS [J].

HAUSER, JJ ;

PATEL, JR ;

RODGERS, JW .

APPLIED PHYSICS LETTERS, 1977, 30 (03) :129-130

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