ONE-DIMENSIONAL WIRE FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON A PATTERNED PNPNP GAAS SUBSTRATE

被引：2

作者：

BURROUGHES, JH ^{[1
]}

GRIMSHAW, MP ^{[1
]}

LEADBEATER, ML ^{[1
]}

RITCHIE, DA ^{[1
]}

PEPPER, M ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown high mobility one-dimensional electron gases by molecular-beam epitaxy (MBE) on etched GaAs pnpnp facets. By applying the appropriate bias to the p- and n-GaAs layers which serve as a unique backgate, the electron gas width and mobility may be controlled. The width may be varied between about 400 and 100 nm. We also find that the mobility increases up to about 6 X 10(5) cm2/V s, rather than decreases with falling carrier concentration.

引用

页码：1277 / 1279

页数：3

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