TOUGHNESS PROPERTIES OF A SILICON-CARBIDE WITH AN IN-SITU INDUCED HETEROGENEOUS GRAIN-STRUCTURE

被引:241
作者
PADTURE, NP
LAWN, BR
机构
[1] Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland
关键词
D O I
10.1111/j.1151-2916.1994.tb04637.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Toughness characteristics of a heterogeneous silicon carbide with a coarsened and elongated grain structure and an intergranular second phase are evaluated relative to a homogeneous, fine-grain control using indentation-strength data. The heterogeneous material exhibits a distinctive flaw tolerance, indicative of a pronounced toughness curve. Quantative evaluation of the data reveals an enhanced toughness in the long-crack region, with the implication of degraded toughness in the short-crack region. The enhanced long-crack toughness is identified with crack-interface bridging. The degraded short-crack toughness is attributed to weakened grain or interface boundaries and to internal residual stresses from thermal expansion mismatch. A profound manifestitation of the toughness-curve behavior is a transition in the nature of mechanical damage in Hertzian contacts, from classical single-crack cone fracture in the homogeneous control to distributed subsurface damage in the heterogeneous material.
引用
收藏
页码:2518 / 2522
页数:5
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