EXCITONIC PROPERTIES AND RESONANCE WIDTHS IN BIASED (GA,IN)AS-GAAS DOUBLE-QUANTUM WELLS

被引：12

作者：

BIGENWALD, P

GIL, B

机构：

[1] Groupe d'Etude des Semiconducteurs, Université de Montpellier II, 34095 Montpellier Cedex 5

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.51.9780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the exciton properties and resonance widths of the charge carriers trapped in (Ga,In)As-GaAs double quantum wells embedded in p-i-n diodes. The calculation is made for both the (001)- and (111)B-oriented structures and evidences the dramatic influence of the built-in piezoelectric field that occurs when the growth axis is (111). We also perform excitation calculations, which show that, when the band lineups are deformed due to the excitonic interaction between particles, the overlap integral of the wave functions increases and so the carriers' escape time out of the quantum-well diodes increases with respect to the values calculated for the "empty" crystal. © 1995 The American Physical Society.

引用

页码：9780 / 9785

页数：6

共 19 条

[1]

Hakayama T., Kondo M., Suyama T., Takahashi K., Yamamoto S., Hijikata T., Phys. Rev. Lett., 60, (1988)

[2]

Hakayama T., Kondo M., Suyama T., Takahashi K., Yamamoto S., Hijikata T., Phys. Rev. B, 38, (1988)

[3]

Weisbuch C., Vinter B., Quantum Semiconductor Structures, (1993)

[4]

Smith D.L., Mailhiot C., Rev. Mod. Phys., 62, (1990)

[5]

Boring P., Gil B., Moore K.J., Phys. Rev. Lett., 71, (1993)

[6]

Moore K.J., Boring P., Gil B., Woodbridge K., Phys. Rev. B, 48, (1993)

[7]

Moise T.S., Guido L.J., Beggy J.C., Cunningham T.J., Seshadri S., Barker R.C., J. Electron. Mater., 21, (1992)

[8]

Hogg R.A., Fisher T.A., Willcox A.R.K., Whittaker D.M., Skolnick M.S., Mowbray D.J., David J.P.R., Pabla A.S., Rees G.J., Grey R., Woodhead J., Sanchez-Rojas J.L., Hill G., Pate M.A., Robson P.N., Phys. Rev. B, 48, (1993)

[9]

Brozak G., Shanabrook B.V., Grammon D., Broido D.A., Beresford R., Wang W.I., Surf. Sci., 267, (1992)

[10]

Trezza J.A., Larson M.C., Lord S.M., Harris J.S., J. Appl. Phys., 74, (1993)

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