ETCH PITS ON THE (511)A AND (511)B PLANES IN CDTE CRYSTALS

被引：8

作者：

IWANAGA, H ^{[1
]}

SHIBATA, N ^{[1
]}

TANAKA, A ^{[1
]}

MASA, Y ^{[1
]}

机构：

[1] SUMITOMO MET MIN CO LTD,ELECTR MAT LAB,OHME,TOKYO 198,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

Cadmium telluride - II-VI semiconductors - Zinc sulfide;

D O I：

10.1016/0022-0248(87)90261-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Rectangular etch pits are developed on the (511)B plane of the CdTe crystal grown by the Bridgman method. The pits have the same origin of the pit developed on the (100) plane. On the other hand, sharp triangular etch pits with a vertical angle of 22° are produced on the (511)A plane. The shape of the pit is explained based on the regular tetrahedron in the zincblende structure. Facets of the pits on the (511)A and the (511)B are the {111}B type polar planes. © Elsevier Science Publishers B.V.

引用

页码：345 / 348

页数：4

共 3 条

[1] ETCH PITS AND POLARITY IN CDTE CRYSTALS [J].

INOUE, M ;

TAKAYANAGI, S ;

TERAMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2578-&

[2] POLARITY IDENTIFICATION OF CDTE CRYSTALLITES [J].

IWANAGA, H ;

YOSHIIE, T ;

TAKEUCHI, S ;

MOCHIZUKI, K .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :691-694

[3] ETCH PITS AND POLARITY IDENTIFICATION IN CDTE, HGSE AND HGTE CRYSTALS [J].

IWANAGA, H ;

TOMIZUKA, A ;

SHIBATA, N ;

MOCHIZUKI, K .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :113-117

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