120W CW OUTPUT POWER FROM MONOLITHIC ALGAAS (800 NM) LASER DIODE-ARRAY MOUNTED ON DIMOND HEATSINK

被引：31

作者：

SAKAMOTO, M

ENDRIZ, JG

SCIFRES, DR

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134-1356

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave output power levels of 120 W at 2-degrees-C and 100 W at room temperature are reported from 1 cm wide monolithic AlGaAs (800 nm) laser diode arrays with a 7200-mu-m total aperture width by using diamond heatsinks. Additionally, 25 W CW operation up to 90-degrees-C has been demonstrated.

引用

页码：197 / 199

页数：3