ORIENTATION AND DOPING EFFECTS IN ION-BEAM ANNEALING OF ALPHA-SILICON

被引：27

作者：

LAFERLA, A

CANNAVO, S

FERLA, G

CAMPISANO, SU

RIMINI, E

SERVIDORI, M

机构：

[1] CNR, LAMEL, I-40126 BOLOGNA, ITALY

[2] UNIV CATANIA, DEPARTIMENTO FIS, I-95129 CATANIA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80093-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：470 / 474

页数：5

共 17 条

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[10] INSITU SELF ION-BEAM ANNEALING OF DAMAGE IN SI DURING HIGH-ENERGY (0.53 MEV-2.56 MEV) AS+ ION-IMPLANTATION [J].

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