DOPED SIO2 DEPOSITION FROM TMP IN APCVD

被引:4
作者
BARTHOLOMEW, LD
GRALENSKI, NM
SISSON, JC
PIGNATEL, GU
机构
[1] Watkins-Johnson Co., Scotts Valley, California
[2] Dip. di Elettrotecnica ed Elettronica, Universita di Bari, Bari, 200 - 70125, Via Re David
来源
EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 02期
关键词
D O I
10.1002/ett.4460010215
中图分类号
TN [电子技术、通信技术];
学科分类号
0809 ;
摘要
In this work we have investigated the feasibility of atmospheric pressure chemical vapor deposition of phosphorus and boron doped silicon oxides from a liquid source—namely TMP (tri‐methyl‐phosphite)—an alternative to phosphine as a P dopant source'. The most important results on process characterization, dopant incorporation, and film properties are presented. In addition to the easy operation of the liquid source, a remarkable improvement in step coverage has been found, in comparison with PSG deposition from conventional silane and phosphine chemistry. Copyright © 1990 John Wiley & Sons, Ltd.
引用
收藏
页码:167 / 172
页数:6
相关论文
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