CURRENT MULTIPLICATION IN THE TYPE-A TRANSISTOR

被引：19

作者：

SITTNER, WR

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 04期

关键词：

D O I：

10.1109/JRPROC.1952.274039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：448 / 454

页数：7

共 10 条

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[2]

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RYDER, RM ;

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[6] HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].

SHOCKLEY, W ;

PEARSON, GL ;

HAYNES, JR .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366

[7] THEORIES OF HIGH VALUES OF ALPHA FOR COLLECTOR CONTACTS ON GERMANIUM [J].

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 78 (03) :294-295

[8]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P102

[9]

Shockley W. B., COMMUNICATION

[10] TRANSISTOR FORMING EFFECTS IN N-TYPE GERMANIUM [J].

VALDES, LB .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (04) :445-448

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