PROPERTIES OF CUINS2 THIN-FILMS PREPARED BY SPRAY PYROLYSIS

被引：29

作者：

BIHRI, H ^{[1
]}

MESSAOUDI, C ^{[1
]}

SAYAH, D ^{[1
]}

BOYER, A ^{[1
]}

MZERD, A ^{[1
]}

ABDLEFDIL, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,ELECTR CTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 129卷 / 01期

关键词：

D O I：

10.1002/pssa.2211290117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInS2 thin films of about 1-mu-m are prepared by spray pyrolysis. The X-ray analysis shows that the film sprayed at 1:1:3 ratio in the spraying mixture present single phase CuInS2 with chalcopyrite structure, and oriented preferentially in the (112) direction. The optical band gap at room temperature is around 1.45 eV. The composition of the thin films can be controlled by varying the sulphur content in the spray solution as shown by electron probe micro-analysis. The electrical properties are studied by varying the Cu:In ratio.

引用

页码：193 / 200

页数：8

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