PHOTOPLEOCHROISM OF GAPXAS1-X SURFACE-BARRIER STRUCTURES

被引：14

作者：

KONNIKOV, SG ^{[1
]}

RUD, VY ^{[1
]}

RUD, YV ^{[1
]}

MELEBAEV, D ^{[1
]}

BERKELIEV, A ^{[1
]}

SERGINOV, M ^{[1
]}

TILEVOV, S ^{[1
]}

机构：

[1] TURKMEN ACAD SCI,INST PHYSICOTECH,ASHKHABAD 744000,TURKMENISTAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

GAPXAS1-X; SURFACE-BARRIER STRUCTURE; CHEMICAL DEPOSITION; PHOTO-SENSITIVITY; PHOTOPLEOCHROISM; POLARIMETRIC EFFECT;

D O I：

10.7567/JJAPS.32S3.515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The proposed work reported here constitutes the first investigation of the polarimetric effects in III-V surface-barrier structures of metal-semiconductor (Au-n-GaPxAS1-x, Au-n-GaP) type, illuminated with linearly polarized radiation (LPR) at oblique incidence on the entrance plane (Au). As the angle theta increases the coefficient of photopleochroism increases as p approximately theta2. The maximum azimutal photosensitivity of the Au-n-GaPxAs1-x (x = 0.45-1.0) structures is PHI(I) = 0.15-0.20 A/W deg at theta = 80-degrees (300 K).

引用

页码：515 / 517

页数：3

共 11 条

[1]

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[2]

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[3]

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[5]

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[6]

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[7]

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[8]

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[9]

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[10]

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