HIGH-LOW JUNCTION EMITTER STRUCTURE FOR IMPROVING SILICON SOLAR-CELL EFFICIENCY

被引：26

作者：

SAH, CT

LINDHOLM, FA

FOSSUM, JG

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

[2] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 01期

关键词：

D O I：

10.1109/T-ED.1978.19036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：66 / 67

页数：2

共 9 条

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DAIELLO, RV ;

ROBINSON, PH ;

KRESSEL, H .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :231-234

[3]

FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[4]

FOSSUM JG, UNPUBLISHED

[5] FUNDAMENTAL ELECTRONIC MECHANISMS LIMITING PERFORMANCE OF SOLAR-CELLS [J].

LINDHOLM, FA ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :299-304

[6] METHODOLOGY FOR EXPERIMENTALLY BASED DETERMINATION OF GAP SHRINKAGE AND EFFECTIVE LIFETIMES IN EMITTER AND BASE OF P-N-JUNCTION SOLAR-CELLS AND OTHER P-N-JUNCTION DEVICES [J].

LINDHOLM, FA ;

NEUGROSCHEL, A ;

SAH, CT ;

GODLEWSKI, MP ;

BRANDHORST, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :402-410

[7]

MANDELKORN J, 1972, 9TH REC IEEE PHOT SP

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[9]

YAGI H, 1974, 1974 INT EL DEV M

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