IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES

被引：269

作者：

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scattering rates for the electron-impurity and the electron-phonon interactions in semiconductor multilayer heterojunction structures are calculated. It is found that phonon scattering is enhanced in such structures, whereas, impurity scattering can be strongly reduced at low temperatures as found experimentally.

引用

页码：484 / 486

页数：3

共 12 条

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