INTERFACE PHONONS IN GAAS ALAS SUPERLATTICES STUDIED BY MICRO-RAMAN SPECTROSCOPY

被引：39

作者：

HUBER, A ^{[1
]}

EGELER, T ^{[1
]}

ETTMULLER, W ^{[1
]}

ROTHFRITZ, H ^{[1
]}

TRANKLE, G ^{[1
]}

ABSTREITER, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1016/0749-6036(91)90248-P

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model. © 1991.

引用

页码：309 / 311

页数：3

共 5 条

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