GAAS METALLIZATION - SOME PROBLEMS AND TRENDS

被引：144

作者：

WOODALL, JM

FREEOUF, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：794 / 798

页数：5

共 37 条

[11] PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].

GOBELI, GW ;

ALLEN, FG .

PHYSICAL REVIEW, 1965, 137 (1A) :A245-&

[12] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].

HIRAKI, A ;

SHUTO, K ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[13] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[14] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].

KURTIN, S ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+

[15]

MASSIES J, 1981, APPL PHYS LETT, V38, P692

[16]

MCCALDIN JO, 1976, PHYS REV LETT, V36

[17] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[18] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[19] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[20] PREDICTION OF FERMI ENERGIES AND PHOTOELECTRIC THRESHOLDS BASED ON ELECTRONEGATIVITY CONCEPTS [J].

NETHERCOT, AH .

PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1088-1091

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