ENHANCEMENT OF PHOTOELECTRIC-EMISSION SENSITIVITY OF TUNGSTEN BY POTASSIUM-ION IMPLANTATION

被引：8

作者：

GIRARDEAUMONTAUT, JP

GIRARDEAUMONTAUT, C

AFIF, M

PEREZ, A

MOUSTAIZIS, SD

机构：

[1] UNIV LYON 1, DEPT PHYS MAT, CNRS, URA 172, F-69622 VILLEURBANNE, FRANCE

[2] FORTH, IESL, GR-71110 IRAKLION, GREECE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of single-photon photoelectric emission sensitivity of ion implanted polycrystalline tungsten surface by 3×1016K+ ions/cm2 are reported. They are compared to the data previously obtained for pure tungsten tested under the same conditions. The enhancement of the photoelectric sensitivity up to a factor of 50 was measured as a consequence of the change in the electronic properties of the tungsten surface, induced by the implanted alkali metal ions. Compared with other techniques used to reduce the work function of pure tungsten, the implanted surface exhibits a lower work function than the pure metal, and is capable of supporting high laser intensity for a long time. For these reasons it seems possible to consider the ion-implantation technique as a suitable new method to significantly improve the photoelectric performances of usual metals, under high laser intensity illuminations.© 1995 American Institute of Physics.

引用

页码：1886 / 1888

页数：3

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