ELECTRON-ELECTRON SCATTERING AND THE ELECTRICAL-RESISTIVITY OF METALS

被引:25
作者
MALDAGUE, PF
KUKKONEN, CA
机构
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[3] FORD MOTOR CO,RES STAFF,DEARBORN,MI 48121
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 12期
关键词
D O I
10.1103/PhysRevB.19.6172
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we present the solution of the coupled Boltzmann equations which describe electrical transport in an interacting two-carrier system. In the isotropic case, these equations reduce to simple kinetic equations which allow a physical interpretation of the mechanisms governing the temperature dependence of the resistivity. Both electron-hole and s-d scattering are considered. At low temperature, with a frequency-independent interaction, electron-electron scattering contributes a characteristic T2 term to the resistivity, as in one-component systems. In the case of electron-hole scattering, the T2 term can persist at high temperatures under certain conditions. The viriational principle is used to treat the effects of an anisotropic Fermi surface or scattering rate. © 1979 The American Physical Society.
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页码:6172 / 6185
页数:14
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