ON SELF-DIFFUSION IN SILICON AND GERMANIUM

[1] ASTIER M, UNPUBLISHED

[2] ASTIER M, 1979, DEFECTS RAD EFFECTS, P180

[3] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[4] BOURGOIN JC, 1977, DIFFUSION MILIEUX CO, V2, P693

[5] ELSTNER L, 1957, PHYS STAT SOL, V22, P541

[6] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[7] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[8] EXPERIMENTAL DETERMINATION OF DIFFUSION AND FORMATION ENERGIES OF THERMAL VACANCIES IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (01) : 34 - &

[9] HUANG CJ, 1968, PHYS REV, V171, P958

[10] KALINOWSKI L, UNPUBLISHED

[1] ASTIER M, UNPUBLISHED

[2] ASTIER M, 1979, DEFECTS RAD EFFECTS, P180

[3] NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1497 - +

[4] BOURGOIN JC, 1977, DIFFUSION MILIEUX CO, V2, P693

[5] ELSTNER L, 1957, PHYS STAT SOL, V22, P541

[6] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &

[7] METHOD FOR DETERMINING SILICON DIFFUSION COEFFICIENTS IN SILICON AND IN SOME SILICON COMPOUNDS [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 890 - +

[8] EXPERIMENTAL DETERMINATION OF DIFFUSION AND FORMATION ENERGIES OF THERMAL VACANCIES IN GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (01) : 34 - &

[9] HUANG CJ, 1968, PHYS REV, V171, P958

[10] KALINOWSKI L, UNPUBLISHED