SHORT-PULSE SUPERSONIC NOZZLE BEAM EPITAXY - A NEW APPROACH FOR SUBMONOLAYER CONTROLLED GROWTH

被引：18

作者：

ZHANG, S ^{[1
]}

CUI, J ^{[1
]}

TANAKA, A ^{[1
]}

AOYAGI, Y ^{[1
]}

机构：

[1] BENTEC CO,TACHIKAWA,TOKYO 190,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.110842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new approach for submonolayer controlled growth using short-pulse supersonic nozzle beam epitaxy (SSBE) was demonstrated. The growth behavior of GaAs was studied by reflection high-energy electron diffraction. As the pulse width of trimethylgallium source was increased from 5 to several hundred ms, a systematic change in the specular beam intensity and in the diffraction pattern was observed. The results showed that the epitaxial growth was easily controlled on a submonolayer level by simply adjusting the pulse width and by counting the number of short pulses. This suggests that the SSBE has the ability to manipulate atomic arrays in the realization of highly confined nanostructure fabrication.

引用

页码：1105 / 1107

页数：3

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