SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS

被引：41

作者：

VANDERZIEL, JP

OBERG, MG

LOGAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期

关键词：

D O I：

10.1063/1.97892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1313 / 1315

页数：3

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[1] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[2] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
[3] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP
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ENNEN, H
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 601 - 610
[4] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51
[5] TSANG W, COMMUNICATION
[6] A NEW HIGH-POWER, NARROW-BEAM TRANSVERSE-MODE STABILIZED SEMICONDUCTOR-LASER AT 1.5-MU-M - THE HETEROEPITAXIAL RIDGE OVERGROWN LASER
TSANG, WT
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1025 - 1027
[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS
TSANG, WT
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688