ATOMIC DISPLACEMENT DUE TO THE ELECTROSTATIC POTENTIAL-ENERGY OF VERY HIGHLY-CHARGED IONS AT SOLID-SURFACES

Unambiguous evidence of a new radiation effect is presented based upon the occurrence of single ion defects which are created through the interaction of the Coulombic potential of slow highly charged ions (e.g., Xe44+ and U70+) and the surface region of solid insulating surfaces (i.e. mica). In the cases studied, the kinetic energy of the ions is some 300 to 500 keV (approximately 2.2 keV/u), while the energy associated with the electrostatic potential of the incident ions approaches 200 keV. Defect production in mica has been investigated as a function of incident ion charge, using an atomic force microscope. The volume of ''blister-like'' defects has been found to be proportional to the incident ion charge. These cases are compared to those of slow singly charged (Xe+) and fast (MeV) Xe17+ ions. Similar defects have been found for Xe44+ ions incident on other insulators such as Lexan and silica glass.