PB-SN-TE PHASE-DIAGRAM AND ITS APPLICATION TO LIQUID-PHASE EPITAXIAL-GROWTH OF PB1-XSNXTE

被引:62
作者
HARRIS, JS [1 ]
LONGO, JT [1 ]
GERTNER, ER [1 ]
CLARKE, JE [1 ]
机构
[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
关键词
D O I
10.1016/0022-0248(75)90070-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:334 / 342
页数:9
相关论文
共 30 条
[1]   HIGH-SPEED PB1-XSNXTE PHOTODIODES [J].
ANDREWS, AM ;
PASKO, JG ;
GERTNER, ER ;
HIGGINS, JA ;
LONGO, JT .
APPLIED PHYSICS LETTERS, 1972, 21 (06) :285-&
[2]   GA-GAP-GAAS TERNARY PHASE DIAGRAM [J].
ANTYPAS, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :700-&
[3]  
CALAWA AR, 1968, T METALL SOC AIME, V242, P374
[4]   GROWTH AND CHARACTERIZATION OF LEAD TELLURIDE EPITAXIAL LAYERS [J].
CROCKER, AJ ;
WIFFEN, DCL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1588-&
[5]  
GROVES SH, TO BE PUBLISHED
[6]  
Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[7]  
Harman T. C., 1973, J NONMETALS, V1, P183
[8]  
Ilegems M., 1968, GALLIUM ARSENIDE, P3
[9]  
ILEGEMS M, ANNUAL REV MATERIALS
[10]  
JORDON AS, 1970, MET T, V1, P237