CHARACTERIZATION AND OPTIMIZATION OF A SINGLE WAFER DOWNSTREAM PLASMA STRIPPER

被引：6

作者：

KALNITSKY, A ^{[1
]}

CHUNG, WK ^{[1
]}

机构：

[1] BRANSON IPC,HAYWARD,CA 94544

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期

关键词：

Photoresists - Plasmas--Applications - Semiconductor Devices; MOS;

D O I：

10.1149/1.2096266

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A comprehensive characterization and optimization of a downstream plasma stripper was carried out. The modified machine allows for noncontaminating (10 ions/cm2) and nondamaging (interface states below detection level) removal of hard-bakes and 'difficult' resists in MOS processing. The modified apparatus reduced the mobile ion contamination to acceptable levels by discharging positive oxygen ions on contact with chamber walls and the quartz shielding arrangement. This apparatus was employed to strip ion implantation hardened resist. The two step process allowed for noncontaminating strip of this 'difficult' resist as well as complete removal of implant-related residue. UV-induced interface trap generation was prevented by utilization of a UV absorbing polysilicon coating, deposited on the quartz shielding arrangement.

引用

页码：2338 / 2341

页数：4

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