ISOTOPE DEPENDENCE OF THE INDIRECT ENERGY-GAP OF GERMANIUM

被引：32

作者：

DAVIES, G

LIGHTOWLERS, EC

ITOH, K

HANSEN, WL

HALLER, EE

OZHOGIN, V

机构：

[1] LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[3] IV KURCHATOV ATOM ENERGY INST,MOSCOW 123182,USSR

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 10期

关键词：

D O I：

10.1088/0268-1242/7/10/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA = 0.35+/-0.02 meV. We show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.

引用

页码：1271 / 1273

页数：3

共 10 条

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