QUANTUM TRANSPORT STUDY OF SILICON AND GERMANIUM BY 4-MM WAVE CYCLOTRON RESONANCE BELOW 1 DEGREES K

被引:23
作者
OHYAMA, T
MURASE, K
OTSUKA, E
机构
关键词
D O I
10.1143/JPSJ.29.912
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:912 / &
相关论文
共 22 条
[1]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[2]  
ERGINSOY C, 1950, PHYS REV, V79, P1913
[3]  
FEHER G, 1959, PHYS REV, V114, P39
[4]   IMPURITY CONDUCTION IN TRANSMUTATION-DOPED P-TYPE GERMANIUM [J].
FRITZSCHE, H ;
CUEVAS, M .
PHYSICAL REVIEW, 1960, 119 (04) :1238-1245
[6]   LINE-BROADENING OF CYCLOTRON RESONANCE DUE TO LATTICE + NEUTRAL IMPURITY SCATTERING IN SILICON + GERMANIUM [J].
FUKAI, M ;
KAWAMURA, H ;
SEKIDO, K ;
IMAI, I .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (01) :30-&
[7]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[8]  
HONIG A, 1968, P INT C PHYS SEMICON, P1117
[9]  
ITO R, 1966, J PHYS SOC JPN, VS 21, P357
[10]   THEORY OF CYCLOTRON RESONANCE LINE WIDTH [J].
KAWABATA, A .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (05) :999-&