THE GENERATION LIFETIME DAMAGE FACTOR AND ITS VARIANCE IN SILICON

被引：43

作者：

DALE, CJ

MARSHALL, PW

BURKE, EA

SUMMERS, GP

BENDER, GE

机构：

[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

[2] MISSION RES CORP,SAN DIEGO,CA 92123

[3] UNIV MARYLAND,DEPT PHYS,CATONSVILLE,MD 21228

[4] GE,PITTSFIELD,MA 01201

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1872 / 1881

页数：10

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[8] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].

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