CRYSTAL-GROWTH IN MIRROR HEATERS - TIME MARKERS BY LAMP PULSES

被引：24

作者：

DANILEWSKY, AN

BENZ, KW

机构：

[1] Kristallographisches Institut, Universität

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(90)90073-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to analyse the shape of the growing interface during the growth of semiconductor single crystals in mirror heating facilities, time markers are generated by defined pulsing of the lamps of the mirror heaters. This easy technique is presented for the THM growth of InP and GaAs. The results are discussed with special respect to the occurrence of dopant inhomogeneities due to growth kinetics (striations type II). © 1990.

引用

页码：273 / 278

页数：6

共 10 条

[1]

Bauser E., 1985, Crystal Growth of Electronic Materials. 5th International Summer School on Crystal Growth and Materials Research, P41

[2] GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].