BLUE-BAND EMISSION OF LIINS2 SINGLE-CRYSTALS GROWN BY THE INDUCTION SOLUTION METHOD

被引:3
作者
KURIYAMA, K [1 ]
KATO, T [1 ]
机构
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词
LILNS2; IN SOLUTION GROWTH; PHOTOLUMINESCENCE; BLUE-BAND EMISSION;
D O I
10.7567/JJAPS.32S3.615
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is demonstrated that the undoped and Zn-doped LiInS2 single crystals are grown using indium solution technique. The optimum weight ratio between the starting materials (LiIn and S) and In solvent was found to be 1:3. The photoluminescence (PL) emissions in the blue-band region were observed for undoped and Zn-doped crystals. It is proposed that in addition to the donor-valence-band transitions related to the native defects (V(S) and In(Li)) in undoped crystals, the PL emission of Zn-doped crystal consists of a multiple transition related to the intentionally introduced impurity, Zn(Li), which act as a donor.
引用
收藏
页码:615 / 617
页数:3
相关论文
共 15 条
[1]   STRUCTURAL PHASE-TRANSITIONS AND OPTICAL-ABSORPTION OF LIINSE2 UNDER PRESSURE [J].
BEISTER, HJ ;
VES, S ;
HONLE, W ;
SYASSEN, K ;
KUHN, G .
PHYSICAL REVIEW B, 1991, 43 (12) :9635-9642
[2]   LINEAR AND NONLINEAR OPTICAL PROPERTIES OF LILNS2 [J].
BOYD, GD ;
KASPER, HM ;
MCFEE, JH .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2809-2812
[3]  
Hoppe R., 1965, B CHIM SOC FR, V1965, P1115
[4]   BLUE-BAND EMISSION IN LILNS2 CRYSTALS [J].
KAMIJOH, T ;
KURIYAMA, K .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1827-1828
[5]  
Kittel C., 1986, INTRO SOLID STATE PH
[6]   OPTICAL BAND-GAP AND BLUE-BAND EMISSION OF A LIINS2 SINGLE-CRYSTAL [J].
KURIYAMA, K ;
KATO, T ;
TAKAHASHI, A .
PHYSICAL REVIEW B, 1992, 46 (23) :15518-15519
[7]   BRIDGMAN GROWTH OF LITHIUM INDIUM ALLOY SINGLE-CRYSTALS [J].
KURIYAMA, K .
JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) :160-162
[8]   ANNEALING BEHAVIOR OF GA AND GE ANTISITE DEFECTS IN NEUTRON-TRANSMUTATION-DOPED SEMIINSULATING GAAS [J].
KURIYAMA, K ;
YOKOYAMA, K ;
TOMIZAWA, K .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (12) :7315-7317
[9]   OBSERVATION OF GA ANTISITE DEFECT IN ELECTRON-IRRADIATED SEMIINSULATING GAAS BY PHOTOLUMINESCENCE [J].
KURIYAMA, K ;
YOKOYAMA, K ;
TOMIZAWA, K ;
TAKEUCHI, T ;
TAKAHASHI, H .
APPLIED PHYSICS LETTERS, 1992, 61 (07) :843-845
[10]  
KURIYAMA K, 1979, J CRYST GROWTH, V46, P801