ELECTRICAL TRANSPORT AND DIELECTRIC BREAKDOWN IN Pb(Zr,Ti)O-3 THIN FILMS

被引：36

作者：

Chen, X. ^{[1
]}

Kingon, A. I. ^{[1
]}

Al-Shreef, H. ^{[1
]}

Bellur, K. R. ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

FERROELECTRICS | 1994年 / 151卷 / 01期

关键词：

D O I：

10.1080/00150199408244733

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The I-V-t characteristics of Pb (Zr0.53Ti0.47)O-3 thin films have been studied. We show that there are three regions of importance in the current-time curves. At short times, there is a transitory region, where current decreases with time, and which may last for > 10(3) seconds in the case of high quality samples. This is followed by the region of steady state leakage, which is best described by a Schottky-type model. However, the bottom electrode (especially oxides) can modify the microstructure significantly, leading to grain boundary conduction paths. The third region is resistance degradation and/or time dependent dielectric breakdown.

引用

页码：133 / 138

页数：6