DIVERGENCE OF THE VERY-LOW-TEMPERATURE RESIDUAL RESISTIVITY OF TMXSE AS X -] 1

被引:60
作者
HAEN, P [1 ]
LAPIERRE, F [1 ]
MIGNOT, JM [1 ]
TOURNIER, R [1 ]
HOLTZBERG, F [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.43.304
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The resistivity of the intermediate-valence compounds TmxSe (0.79<x<0.993) has been measured down to 10 mK. The variation of the residual resistivity with composition (i.e., with the proportion of Tm2+) suggests that a perfectly stoichiometric system might become insulating at 0 K. This divergence seems to take place when the two valence states are equal in concentration. A possible interpretation based on the recent developments of the Kondo-lattice models is discussed. © 1979 The American Physical Society.
引用
收藏
页码:304 / 307
页数:4
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