GROWTH OF EPITAXIAL ALUMINUM NITRIDE AND ALUMINUM NITRIDE ZIRCONIUM NITRIDE SUPERLATTICES ON SI(111)

被引:15
作者
MENG, WJ
HEREMANS, J
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.578031
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Growth of epitaxial aluminum nitride (AlN) and crystalline superlattices of aluminum nitride/zirconium nitride (AlN/ZrN) on Si(111) by ultrahigh-vacuum dc magnetron reactive sputtering has been studied. Detailed structural characterizations were carried out with techniques of x-ray diffraction, transmission electron microscopy, and reflection high energy electron diffraction. Results on epitaxial orientation, defect configuration, and growth mode are discussed.
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页码:1610 / 1617
页数:8
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