IN-SITU DETECTION OF REARRANGEMENT PROCESSES DURING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INP

被引：27

作者：

MAURER, C ^{[1
]}

KALLWEIT, R ^{[1
]}

BAUMANN, H ^{[1
]}

BETHGE, K ^{[1
]}

KRIMMEL, EF ^{[1
]}

机构：

[1] FORSCHUNGSINST DEUTSCH BUNDESPOST TELEKOM,W-6100 DARMSTADT,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)96182-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion implantation and short-time electron beam annealing can be used as precise and reproducible tool for introducing controlled quantities of impurities into semiconductors. Measurement of the thermal radiation of ion implanted samples during the electron beam tempering process allows the in situ detection of changes in the surface structure and charge carrier density. In contrast to temperature controlled annealing methods, it is therefore possible to precisely control the annealing by the detection of rearrangement processes. We exemplify the method by the activation and diffusion of P during the temperature treatment for the well-known system of P implanted Si [2]. Furthermore, tempering of semi-insulating as well as of Mg+ implanted InP by means of electron beam irradiation is presented.

引用

页码：564 / 568

页数：5