MAGNETOPHONON EFFECT IN INAS1-XPX

被引:24
作者
NICHOLAS, RJ [1 ]
STRADLING, RA [1 ]
PORTAL, JC [1 ]
ASKENAZY, S [1 ]
机构
[1] INST NATL SCI APPL,DEPT PHYS,TOULOUSE,FRANCE
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 09期
关键词
D O I
10.1088/0022-3719/12/9/008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Magnetophonon oscillations have been observed in the alloy system InAs 1-xPx. Two magnetophonon series were detected across the complete range of alloy compositions, resulting from the two LO phonon modes present in mixed crystals of InAs1-xPx. The fundamental fields have been used to calculate the LO phonon energies and to determine the temperature dependence of the effective mass. Magnetophonon oscillations were also observed in the Hall coefficient and these exhibited phaseshifts and reversals of sign with respect to the extrema observed in the transverse magnetoresistance.
引用
收藏
页码:1653 / 1664
页数:12
相关论文
共 28 条
[1]   THEORY OF HALL-COEFFICIENT MAGNETOPHONON OSCILLATIONS IN GAAS [J].
BARKER, JR ;
MCSHEEHY, CJ .
PHYSICS LETTERS A, 1973, A 46 (04) :237-238
[2]   OSCILLATORY STRUCTURE OF MAGNETOPHONON EFFECT .1. TRANSVERSE CONFIGURATION [J].
BARKER, JR .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13) :1657-&
[3]   EXPERIMENTAL PHASE-SHIFTS IN MAGNETOPHONON RESONANCE [J].
BLAKEMORE, JS ;
KENNEWELL, JA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (05) :647-654
[4]   LONG WAVELENGTH OPTICAL PHONONS IN MIXED CRYSTALS [J].
CHANG, IF ;
MITRA, SS .
ADVANCES IN PHYSICS, 1971, 20 (85) :359-+
[5]   FOURIER-ANALYSIS OF MAGNETOPHONON AND 2-DIMENSIONAL SHUBNIKOV-DE HAAS MAGNETORESISTANCE STRUCTURE [J].
EAVES, L ;
HOULT, RA ;
STRADLING, RA ;
TIDEY, RJ ;
PORTAL, JC ;
ASKENAZY, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (07) :1034-1053
[6]   MAGNETOPHONON EFFECT IN EPITAXIAL FILMS OF TYPE INP [J].
EAVES, L ;
STRADLIN.RA ;
ASKENAZY, S ;
LEOTIN, J ;
PORTAL, JC ;
ULMET, JP .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :L42-+
[7]  
EAVES L, 1974, J PHYS C, V7, P199
[8]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[9]  
HARPER PG, 1973, REP PROG PHYS, V37, P1
[10]  
HUDSON PA, 1975, PHYSICS B, V26, P57