A NOVEL DEPLETION-GATE AMORPHOUS-SILICON THIN-FILM TRANSISTOR

被引：2

作者：

WU, BS

CHENG, JS

TSAI, HK

LIN, TL

WENG, TS

LIN, WJ

CHEN, HK

机构：

[1] Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期

关键词：

Solid State Devices; Thin Film;

D O I：

10.1109/55.144937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of amorphous silicon (a-Si) thin-film transistor (TFT) in which a depletion gate is added to the top of the second nitride layer of a conventional a-Si TFT has been fabricated. In this new transistor, switching is done by the depletion gate instead of the accumulation gate as in conventional a-Si TFT's. The pinch-off voltage and ON-OFF current ratio of the transistor can be changed by the accumulation gate bias. The transistor exhibits high ON-OFF current ratio, low contact resistance, and low gate-source capacitance.

引用

页码：17 / 19

页数：3

共 9 条

[1] ANALYSIS AND DESIGN OF A-SI TFT LCD PANELS WITH A PIXEL MODEL [J].

KANEKO, Y ;

SASANO, A ;

TSUKADA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2953-2958

[2]

KANEMORI Y, 1990 SID DIG, P408

[3]

LUO FC, 1988 SID DIG, P235

[4] AMORPHOUS-SILICON IMAGE SENSOR IC [J].

MATSUMURA, M ;

HAYAMA, H ;

NARA, Y ;

ISHIBASHI, K .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :182-184

[5]

OKITA Y, 1991 SID DIG, P411

[6]

POSSIN GE, 1985, P SID, V26, P183

[7] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS [J].

SNELL, AJ ;

SPEAR, WE ;

LECOMBER, PG ;

MACKENZIE, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02) :83-86

[8]

TAUN HC, 1982, IEEE ELECTRON DEVICE, V3, P357

[9]

WEISFIELD RL, 1987, MATER RES SOC S P, V95, P469

← 1 →