CALCULATIONS OF THE ELECTRON-MOBILITY OF INASXP1-X

The electron mobility of InAsxP1-x bulk semiconductor as a function of composition, x, is calculated at 300 K and 77 K. The scattering processes being considered are impurities, acoustic phonons, optical phonons and alloy scattering. The electron mobility as a function of temperature for a carrier density of 10(16) cm-3 at x = 0.35 is also presented. The calculated electron mobilities at 300 and 77 K are in good agreement with various experimental results reported elsewhere. Alloy scattering is determined to be significant for both temperatures. AT 77 K, the alloy scattering process is revealed to be the most significant scattering process at x = 0.1-0.7. Ionized impurities scattering is also found to be important at 77 K.