ABOUT BAND-STRUCTURE OF GAXIN1-XP ALLOYS

被引：15

作者：

LAUGIER, A

CHEVALLIER, J

机构：

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 10卷 / 04期

关键词：

D O I：

10.1016/0038-1098(72)90440-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：353 / +

页数：1

共 21 条

[1]

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[8]

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[9] BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN IN1-XGAXP ALLOYS [J].

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APPLIED PHYSICS LETTERS, 1968, 13 (12) :421-&

[10] BAND GAP OF GALLIUM PHOSPHIDE FROM 0 TO 900 DEGREES K AND LIGHT EMISSION FROM DIODES AT HIGH TEMPERATURES [J].

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