BAND-TO-BAND AUGER EFFECT ON THE OUTPUT POWER SATURATION IN INGAASP LEDS

被引：37

作者：

SUGIMURA, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 04期

关键词：

D O I：

10.1109/JQE.1981.1071143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：441 / 444

页数：4

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[1] GOODFELLOW RC, 1979, 37TH ANN DEV RES C
[2] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[3] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[4] SINGLE-MODE SYSTEMS AND COMPONENTS FOR LONGER WAVELENGTHS
KIMURA, T
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1979, 26 (12): : 987 - 1010
[5] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS
LAWAETZ, P
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3460 - &
[6] DEFECT-ASSISTED AND PHONON-ASSISTED TUNNELING IN LPE IN1-XGAXP1-ZASZ DH LASER-DIODES (LAMBDA APPROXIMATELY 1 MUM)
LUDOWISE, MJ
HOLONYAK, N
WRIGHT, PD
VOJAK, BA
REZEK, EA
KORB, HW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4287 - 4291
[7] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
NAGAI, H
NOGUCHI, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236
[8] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP
NAHORY, RE
POLLACK, MA
JOHNSTON, WD
BARNS, RL
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 659 - 661
[9] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE
OE, K
ANDO, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1273 - 1274
[10] ELECTROREFLECTANCE OF INDIUM GALLIUM-ARSENIDE PHOSPHIDE LATTICE MATCHED TO INDIUM-PHOSPHIDE
PEREA, EH
MENDEZ, EE
FONSTAD, CG
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 978 - 980