IMPLANT ISOLATION OF GAAS

被引：43

作者：

SHORT, KT

PEARTON, SJ

机构：

[1] AT&T Bell Lab, United States

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 11期

关键词：

Hall Effect--Measurements - Semiconductor Materials--Electric Properties;

D O I：

10.1149/1.2095443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The ion species and dose dependence of implant-induced high resistivity regions in doped GaAs were investigated by Hall effect measurements, Rutherford backscattering, and secondary ion mass spectrometry. The initial conductivity of the GaAs is restored by annealing at 600°C, regardless of implant dose or species (O,F, or Ne), and the maximum resistivity in the material occurs for 500°C annealing. The temperature dependence of the carrier concentration in these samples shows the presence of several deep states responsible for the compensation effect.

引用

页码：2835 / 2840

页数：6

共 11 条

[1] COMPENSATION FROM IMPLANTATION IN GAAS [J].

DAVIES, DE ;

KENNEDY, JK ;

YANG, AC .

APPLIED PHYSICS LETTERS, 1973, 23 (11) :615-616

[2] THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

DONNELLY, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :553-571

[3] CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN ;

GAUNEAU, M ;

LHARIDON, H ;

DEVEAUD, B ;

EVANS, CA ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :271-273

[4] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

[5] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[6]

Morgan D. V., 1985, Gallium arsenide materials, devices, and circuits, P161

[7] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

PEARTON, SJ ;

DAUTREMONTSMITH, WC ;

CHEVALLIER, J ;

TU, CW ;

CUMMINGS, KD .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2821-2827

[8]

PEARTON SJ, UNPUB

[9] DOPING OF III-V COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION [J].

STEPHENS, KG .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :589-614

[10]

Williams J. S., 1982, Laser annealing of semiconductors, P383

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