PARAMETRIC YIELD OPTIMIZATION FOR MOS CIRCUIT BLOCKS

被引：42

作者：

HOCEVAR, DE

COX, PF

YANG, P

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 06期

关键词：

D O I：

10.1109/43.3204

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：645 / 658

页数：14

共 28 条

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