RELATION OF THE N-VALUE OF THE RESISTIVE TRANSITION TO MICROSTRUCTURE AND INHOMOGENEITY FOR YBA2CU3O7 WIRES

被引:29
作者
EVETTS, JE [1 ]
GLOWACKI, BA [1 ]
SAMPSON, PL [1 ]
BLAMIRE, MG [1 ]
ALFORD, NMN [1 ]
HARMER, MA [1 ]
机构
[1] ICI ADV MAT,RUNCORN WA7 4QD,CHESHIRE,ENGLAND
关键词
D O I
10.1109/20.92710
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:2041 / 2044
页数:4
相关论文
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