Theory of interband Raman scattering in semiconductors in magnetic fields

被引：39

作者：

Wallis, R. F. ^{[1
]}

Mills, D. L. ^{[1
]}

机构：

[1] Univ Calif Irvine, Irvine, CA 92664 USA

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.2.3312

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A theory is developed for interband Raman scattering in a semiconductor in an external magnetic field. The process involves an interband electronic transition and an interband transition between Landau levels. Specific formulas are presented for the two-band model of a semiconductor, and numerical calculations are presented for PbTe. The scattering efficiency shows density-of-states peaks and a strong resonance when the scattered frequency equals the cyclotron frequency. The latter scattering should be experimentally observable.

引用

页码：3312 / 3315

页数：4

共 13 条

[1] MAGNETO-REFLECTION STUDIES OF COUPLED PLASMON-PHONON MODES IN PBTE [J].