MOBILITY ANISOTROPY OF ELECTRONS IN INVERSION LAYERS ON OXIDIZED SILICON SURFACES

被引：239

作者：

SATO, T

TAKEISHI, Y

HARA, H

OKAMOTO, Y

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 4卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.4.1950

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1950 / &

共 18 条

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[7]

MAEDA H, UNPUBLISHED

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