STRUCTURAL DEFECTS IN POLY(METHYLPHENYLSILYLENE)

被引:66
作者
FUJIKI, M
机构
[1] NTT Basic Research Laboratories, Musashino, Tokyo
关键词
D O I
10.1016/0009-2614(92)90067-W
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Si-based structural defects in poly(methylphenylsilylene) backbones were detected as two new Si-29 NMR signals and as two new Si-Si vibrational IR bands. The defects, consisting of an organosilyne unit and about three methylphenylsilylene monomer units near the branch, were presumed to be in a fairly lengthened Si-Si bonding state. The empirical linear relationship between the relative intensity of broad photoluminescence and the defect density predicts the disappearance of the broad luminescence for a defect density of less than 1 %.
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页码:177 / 182
页数:6
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