HOT-ELECTRON SCATTERING PROCESSES IN METAL-FILMS AND AT METAL-SEMICONDUCTOR INTERFACES

被引：83

作者：

LUDEKE, R ^{[1
]}

BAUER, A ^{[1
]}

机构：

[1] FREE UNIV BERLIN,INST EXPTL PHYS,W-1000 BERLIN 33,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.71.1760

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ballistic electron emission spectroscopy is used to investigate current attenuations in thin films of Pd/Si, from which the clastic and inelastic mean free paths are uniquely determined. The observed equality of transmission across Pd/Si(100) and Si(111) interfaces is attributed to interface scattering, on the basis of which a current transport model is developed that gives unprecedented agreement with experiment over a wide energy range.

引用

页码：1760 / 1763

页数：4

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