HOT-ELECTRON SCATTERING PROCESSES IN METAL-FILMS AND AT METAL-SEMICONDUCTOR INTERFACES

被引:82
作者
LUDEKE, R [1 ]
BAUER, A [1 ]
机构
[1] FREE UNIV BERLIN,INST EXPTL PHYS,W-1000 BERLIN 33,GERMANY
关键词
D O I
10.1103/PhysRevLett.71.1760
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ballistic electron emission spectroscopy is used to investigate current attenuations in thin films of Pd/Si, from which the clastic and inelastic mean free paths are uniquely determined. The observed equality of transmission across Pd/Si(100) and Si(111) interfaces is attributed to interface scattering, on the basis of which a current transport model is developed that gives unprecedented agreement with experiment over a wide energy range.
引用
收藏
页码:1760 / 1763
页数:4
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