PHOTOLUMINESCENCE OF SE-ANNEALED CUINSE2 POWDERS

被引：2

作者：

KRUSTOK, J ^{[1
]}

MADASSON, J ^{[1
]}

HJELT, K ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL, OPTOELECTR LABS, SF-02150 ESPOO, FINLAND

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1994年 / 13卷 / 21期

关键词：

D O I：

10.1007/BF00626512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1570 / 1572

页数：3

共 10 条

[1]

ABOUELFOTOUH F, 1985, PROGR CRYST GROWTH C, V10, P365

[2]

BONILLA CF, 1964, NUCLEONICS, V22, P160

[3] THE NATURE OF RECOMBINATION CENTERS IN SILVER-DOPED AND CHLORINE-DOPED CDS PHOSPHORS [J].

KRUSTOK, J ;

MADASSON, J ;

ALTOSAAR, M ;

KUKK, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1990, 51 (09) :1013-1018

[4] DEEP-LEVEL PHOTOLUMINESCENCE OF DOPED CDTE IN THE 0.8EV REGION [J].

KRUSTOK, J ;

LOO, A ;

PIIBE, T .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (08) :1037-1038

[5] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY OF CUINSE2 [J].

LANGE, P ;

NEFF, H ;

FEARHEILEY, M ;

BACHMANN, KJ .

PHYSICAL REVIEW B, 1985, 31 (06) :4074-4076

[6] CONCERNING LATTICE-DEFECTS AND DEFECT LEVELS IN CUINSE2 AND THE I-III-VI2 COMPOUNDS [J].

MASSE, G .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2206-2210

[7] CUINSE2 FOR PHOTOVOLTAIC APPLICATIONS [J].

ROCKETT, A ;

BIRKMIRE, RW .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :R81-R97

[8]

TANDA M, 1992, JPN J APPL PHYS, V31, P753

[9] THE DEFECT STRUCTURE OF CUINS2 .1. INTRINSIC DEFECTS [J].

UENG, HY ;

HWANG, HL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1989, 50 (12) :1297-1305

[10] DEFECT STRUCTURE OF NONSTOICHIOMETRIC CU-I-III-VI2 CHALCOPYRITE SEMICONDUCTORS [J].

UENG, HY ;

HWANG, HL .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (03) :261-267

← 1 →