TIME-DEPENDENCE OF HOT-CARRIER DEGRADATION IN LDD NMOSFETS

被引：8

作者：

WANG, Q

KRAUTSCHNEIDER, WH

BROX, M

WEBER, W

机构：

[1] was with Siemens AG, Corporate Research and Development, ZFE ME MS, now with Siemens Matushita Comp., Balanstr. 73

[2] Siemens Comp. Inc., Essex Junction, VT 05452

[3] Siemens AG, Corporate Research and Development, ZFE ME MS 34, Otto-Han-Ring 6

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90260-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new model for understanding the saturated time dependence of hot-carrier degradation in LDD nMOSFETs. The peak of the lateral field, and thus the zone of high injection current, moves into the LDD region where generated interface states are of almost no influence on the MOSFET I(V)-characteristics.

引用

页码：441 / 444

页数：4