MICROANALYSIS OF SI, S AND ZN IN GASB BY USE OF DIRECT OBSERVATION OF (P, P'GAMMA) REACTIONS

被引：17

作者：

CHEMIN, JF ^{[1
]}

ROTURIER, J ^{[1
]}

SABOYA, B ^{[1
]}

PETIT, GY ^{[1
]}

机构：

[1] CEN BORDEAUX,GRADIGNAN,FRANCE

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1972年 / 12卷 / 01期

关键词：

D O I：

10.1007/BF02520990

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：221 / 232

页数：12

共 8 条

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[3] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

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DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

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[4]

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[5] INVESTIGATION OF REACTION 32S(D,P)33S IN DEUTERON ENERGY RANGE 1.5-2.5 MEV [J].

SAAD, HR ;

SALEH, ZA ;

MANSOUR, NA ;

SAYED, EM ;

ZALOUBOVSKY, II .

NUCLEAR PHYSICS, 1966, 84 (03) :629-+

[6]

SAWA P, 1970, PHYS SCRIPTA, V1, P233

[7] MECHANISM OF THE SI(D,P) REACTIONS BELOW 3 MEV [J].

WILDENTHAL, BH ;

KRONE, RW ;

PROSSER, FW .

PHYSICAL REVIEW B, 1964, 135 (3B) :B680-&

[8]

ZABEGAI VM, 1970, SOV J NUCL PHYS+, V10, P647

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