EFFECTIVE TEMPERATURE OF HOT-ELECTRONS - WHY IT APPROACHES THE LATTICE TEMPERATURE

被引:1
作者
LACAITA, A
机构
[1] Centro di Elettron. Quantistica e Strumentazione Elettron., Politecnico di Milano
关键词
D O I
10.1088/0268-1242/7/3B/155
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monte Carlo simulations of carrier transport in the channel of metal-oxide field-effect transistors show a tail in the electron distribution with an effective temperature equal to the lattice temperature. Based on the solution of the Boltzmann transport equation in the relaxation approximation, I give a physical explanation of this feature. The tail at the lattice effective temperature is due to a fundamental energy cutoff: the finite energy the electric field can supply to the carriers on their way from source to drain.
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收藏
页码:B590 / B592
页数:3
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