HIGH T-C JOSEPHSON-JUNCTIONS COMBINING A GRAIN-BOUNDARY AND FOCAL STRAIN, USING NDGAO3 BICRYSTAL SUBSTRATES

被引：19

作者：

QUINCEY, PG

机构：

[1] Division of Electrical Science, National Physical Laboratory, Teddington

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bicrystal substrate approach to high T-c Josephson junctions has previously used substrates with cubic (isotropic) structure. NdGaO3, which has orthorhombic structure, has excellent lattice match to YBa2Cu3O7_x and good dielectric properties. When bicrystals are made with NdGaO3 in the usual (110) orientation, the anisotropy means that there will be thermally induced local strain at the grain boundary in any overlaid film. Several junctions have been made with this novel variation on the bicrystal technique, showing values of I(c)R(N), around 400 mu V at 77 K.

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页码：517 / 519

页数：3

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